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• W2053372385 abstract "This study reports experimentally a novel sub-10V 4-bit/cell nanowire silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for use in nonvolatile NAND Flash memories. Applying metallic Schottky barrier source/drain in the silicon gate-all-around nanowire SONOS cells enables the multi-level 4-bit/cell SONOS memory to operate at sub-10V gate voltages using efficient electron programming and hole erasing through Fowler-Nordheim mode tunneling. Examples of 2-bit/cell, 3-bit/cell, and 4-bit/cell applications in this Schottky barrier nanowire SONOS memory cell are demonstrated with multi-level electron programming. Reliability characterization confirms these multi-bit cells to operate well after 10K cycling endurance and 125°C high temperature retention stress." @default.
• W2053372385 created "2016-06-24" @default.
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• W2053372385 date "2012-08-01" @default.
• W2053372385 modified "2023-09-25" @default.
• W2053372385 title "Sub-10V 4-bit/cell Schottky barrier nanowire nonvolatile memory" @default.
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• W2053372385 doi "https://doi.org/10.1109/nano.2012.6322041" @default.
• W2053372385 hasPublicationYear "2012" @default.
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