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• W2053390847 abstract "An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices is presented. The Insulated Gate Bipolar Transistor (IGBT) technology is explored from its initial stage up to the latest state-of-the-art developments, in terms of cathode engineering, drift design and anode engineering to highlight the different approaches used for optimisation and the achieved trade-offs. Further, several MOS-gated thyristors, which are aimed to replace the IGBT, are analysed. Moreover, the present paper reviews the various approaches in the fabrication of edge termination used in power device MOS-controlled bipolar devices." @default.
• W2053390847 created "2016-06-24" @default.
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• W2053390847 date "2004-03-01" @default.
• W2053390847 modified "2023-09-26" @default.
• W2053390847 title "Progress in MOS-controlled bipolar devices and edge termination technologies" @default.
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• W2053390847 doi "https://doi.org/10.1016/s0026-2692(03)00186-1" @default.
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