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• W2053533973 abstract "Photoluminescence properties and surface morphologies of porous silicon were investigated by controlling of etching times and applied current densities. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200 mA/cm2 exhibited very stable and even surface. However the porous silicon prepared at currents above 300 mA/cm2 displayed the cracked surface of porous silicon. This cracked surface was collapsed to give cracked domains at currents over 500 mA/cm2. Photoluminescence of porous silicon was investigated by controlling of etching times and applied current densities in the range from 50 to 900 s and from 50 to 800 mA/cm2, respectively. Photoluminescence intensity of porous silicon increased gradually during etching process, reached maximum, and then decreased as the etching time increased. Porous silicon showed the best photoluminescence efficiency was prepared at currents of 200 mA/cm2 and etching time of 300 s." @default.
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• W2053533973 date "2012-01-01" @default.
• W2053533973 modified "2023-09-25" @default.
• W2053533973 title "Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities" @default.
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• W2053533973 doi "https://doi.org/10.1016/j.mee.2011.03.145" @default.
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