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• W2053641346 abstract "We demonstrate a simple and an inexpensive approach for the low-temperature fabrication of low-voltage-operated , organic, pentacene-based, nonvolatile memory devices with a high- hafnium dioxide main dielectric layer and a polymer electret layer. Two kinds of polymer insulators were used as the electret layer, i.e., a poly(vinylalcohol) (PVA) with strong polar groups and an amorphous poly(methyl methacrylate) (PMMA). We studied the memory characteristics of the corresponding devices, including writing and erasing process, long-term retention, and multiple continuous writing/erasing cycles' endurance testing. The memory windows in devices with PVA can be attributed to the dominant short-lifetime shallow traps located at the PVA/pentacene interface and in the pentacene film, whereas those in devices with PMMA are mainly due to the long-lifetime deep traps located in the PMMA layer. The possible sources of shallow-type and deep-type traps in the memory devices were discussed. Accordingly, the devices with the PMMA layer show superior memory characteristics, including a stable memory window of approximately after pulse, retaining 80% of memory windows after and a good endurance properties." @default.
• W2053641346 created "2016-06-24" @default.
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• W2053641346 date "2011-01-01" @default.
• W2053641346 modified "2023-09-27" @default.
• W2053641346 title "Organic Nonvolatile Memory Based on Low Voltage Organic Thin Film Transistors with Polymer Gate Electrets" @default.
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• W2053641346 doi "https://doi.org/10.1149/1.3532057" @default.
• W2053641346 hasPublicationYear "2011" @default.
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