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- W2053725518 abstract "In this study, a high breakdown voltage (VBR) enhancement-mode (E-mode) MgxZn1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd2O3) gate insulator and CF4 plasma treatment technologies. The threshold voltage (VT) for conventional Gd2O3/MgxZn1-xO TFTs was −2.8 V and this value was adjusted to + 0.1V after nine minutes of CF4 plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in MgxZn1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density." @default.
- W2053725518 created "2016-06-24" @default.
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- W2053725518 date "2011-01-01" @default.
- W2053725518 modified "2023-09-22" @default.
- W2053725518 title "High Breakdown Voltage Enhancement-Mode MgxZn1-xO Thin-Film Transistor Using CF4 Plasma Treatment" @default.
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- W2053725518 doi "https://doi.org/10.1149/2.004202esl" @default.
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