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- W2053756412 abstract "We describe our first results on porous silicon (π-Si) preparation and characterization. The π-Si is obtained by anodic etching of crystalline silicon (c-Si) in an aqueous solution of ethanol and hydrofluoric acid. The samples were prepared by both lateral cell configuration and the usual single cell configuration, only for comparison. We studied their structure by scanning electron microscopy (SEM), and their photoluminescence by exciting them with ultraviolet light (350 to 400 nm). Samples prepared by the lateral cell configuration, showed a more efficient luminescence in the red region (peaked at 650 nm) than those prepared by the single cell process. Although this luminescence was not homogeneous, it was more stable in time than that emitted from the single cell samples. The inhomogeneous emission is a consequence of the pore morphology, originated by the preparation method. We developed a qualitative model for understanding this inhomogeneous emission through the understanding of the current density of the electrochemical preparation." @default.
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- W2053756412 date "2000-07-01" @default.
- W2053756412 modified "2023-09-24" @default.
- W2053756412 title "Porous Silicon Growth by Lateral Anodization" @default.
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- W2053756412 doi "https://doi.org/10.1002/1521-3951(200007)220:1<319::aid-pssb319>3.0.co;2-p" @default.
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