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- W2053904989 abstract "Electron concentration and mobility profiles for Te implanted semi-insulating GaAs samples annealed with a reactively sputtered silicon nitride protective layer (or cap) have been measured as a function of the dose of implanted Te and the annealing temperature. Results of high dose implants into n-type epitaxial samples are essentially the same as those obtained using semi-insulating material from different suppliers. Samples in which Ga was implanted either before or after the implantation of Te exhibited essentially the same electron concentration and mobility profiles as those in which only Te was implanted. Attempts to introduce As vacancies by preannealing Te implanted samples without a cap at temperatures between 550 and 700°C also had no effect on the measured profiles. The use of an aluminum oxy-nitride cap resulted in about twice the doping efficiency and three times the maximum electron concentration than was obtained with a silicon nitride cap for doses of 1 × 1014 Te ions/cm2." @default.
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- W2053904989 date "1977-03-01" @default.
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- W2053904989 title "Tellurium implantation in GaAs" @default.
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- W2053904989 doi "https://doi.org/10.1016/0038-1101(77)90187-3" @default.
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