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- W2053944462 abstract "The VPE growth of InGaAsP alloy using the chloride single flat temperature-zone (SFT) method is described. The basic data, such as growth kinetics, optical and electrical properties, of InGaAsP layers grown by the chloride SFT method are shown. It is seen that the chloride SFT method provides good crystalline InGaAsP layer reproducibly. The same slow kinetic process as in other III-V compounds and alloys limits the rate of the InGaAsP growth. Moreover, InGaAsP/InP heterostructure is prepared, and a photoluminescence peak width as narrow as 13.5 meV at 4.2 K is obtained, from 100 Åsingle quantum well." @default.
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- W2053944462 date "1992-09-01" @default.
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- W2053944462 title "Vapor phase epitaxy of InGaAsP by the chloride single flat temperature zone method" @default.
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- W2053944462 doi "https://doi.org/10.1016/0022-0248(92)90026-f" @default.
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