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- W2053971330 abstract "Abstract Band-edge profiles are calculated for a graded heterojunction diode, i.e. a wide band gap n -HgCdTe layer on a 0.1 eV gap p -HgCdTe substrate, when the energy level for the valence band top (measured from the vacuum level) varies spatially in the same way as the alloy composition does (non-zero valence band offset). The conditions for no barrier-formation in the profiles are derived from the calculations as functions of profiles of both dopant densities and composition. The following characteristics were obtained: (1) Potential barriers do not appear when the relation N A - N D ⩽10 15 cm −3 holds. (2) The positive valence band offset value, which corresponds to a practical case, alleviates a limitation to the alloy composition of the n -side crystal. (3) As the valence band offset increases, the region free from barrier formation shifts toward a region with smaller dopant densities, as well as toward a region with steeper distribution of alloy composition. Using the last result on the alloy composition, conditions for crystal growth are briefly discussed." @default.
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- W2053971330 date "1987-01-01" @default.
- W2053971330 modified "2023-09-25" @default.
- W2053971330 title "Studies on optimization for HgCdTe heterojunction photodiodes" @default.
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- W2053971330 doi "https://doi.org/10.1016/0020-0891(87)90050-9" @default.
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