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- W2054037458 abstract "Abstract Very low fast defect state densities ( N IT ) at the SiSiO 2 interface can be obtained using annealing with a layer containing hydrogen. These hydrogenated interface states, enabling SCCDs with low transfer inefficiencies have been investigated by means of conductance measurements under bias temperature stress. The least stable conditions occur with negative gate voltage, where N IT reacts more sensitively than for a normally grown oxide due presumably to the dissociation of Si s H bonds and reaction of H with a new oxide trap." @default.
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- W2054037458 date "1981-06-01" @default.
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- W2054037458 title "Stability of SCCDs with extremely low interface state density" @default.
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- W2054037458 doi "https://doi.org/10.1016/0038-1101(81)90074-5" @default.
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