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- W2054128466 abstract "Instabilities at room temperatures in MOS structures having SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> films deposited by decomposition of TEOS are manifested in a shift, along the voltage axis, of the capacitance-voltage characteristics after voltage stress in the reverse direction. Typical shifts amounted to 13 volts and could not be reversed by a forward voltage." @default.
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- W2054128466 date "1967-01-01" @default.
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- W2054128466 title "Room temperature instabilities in MOS structures with pyrolytic SiO2films" @default.
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- W2054128466 doi "https://doi.org/10.1109/proc.1967.5440" @default.
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