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- W2054163968 abstract "We report that NH3 ambient thermal annealing is a promising method for recovering the dry- etch-induced damage on Mg-doped GaN surfaces. The surface electrical properties of dry-etched Mg-doped GaN can be fully recovered by thermal annealing using NH3 as an ambient gas at temperatures above 900 °C. The complete recovery of sheet hole concentration in dry-etched Mg-doped GaN can be attributed to a reduction in excess nitrogen vacancies in the damaged surface region by reactive nitrogen atoms supplied during NH3 ambient thermal annealing." @default.
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- W2054163968 date "2004-02-12" @default.
- W2054163968 modified "2023-10-14" @default.
- W2054163968 title "Recovery of dry-etch-induced surface damage on Mg-doped GaN by NH3 ambient thermal annealing" @default.
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- W2054163968 doi "https://doi.org/10.1116/1.1645882" @default.
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