Matches in SemOpenAlex for { <https://semopenalex.org/work/W2054203671> ?p ?o ?g. }
- W2054203671 endingPage "101" @default.
- W2054203671 startingPage "87" @default.
- W2054203671 abstract "Abstract Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III–V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-SiC(0 0 0 1), ZnO(1 1 1) and Si(1 1 1) also being used primarily for the growth of wurtzite GaN(0 0 0 1) in tandem with previously deposited GaN(0 0 0 1) or AlN(0 0 0 1) buffer layers. Silicon(0 0 1), GaAs(0 0 1), GaP(0 0 1) and 3C-SiC(0 0 1) have been employed for growth of cubic (zincblende) β-GaN(0 0 1). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 ± 50°C to 800 ± 50°C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material." @default.
- W2054203671 created "2016-06-24" @default.
- W2054203671 creator A5005575533 @default.
- W2054203671 creator A5010421357 @default.
- W2054203671 creator A5010582945 @default.
- W2054203671 creator A5020191534 @default.
- W2054203671 creator A5030685273 @default.
- W2054203671 creator A5032710779 @default.
- W2054203671 creator A5033921118 @default.
- W2054203671 creator A5060546318 @default.
- W2054203671 creator A5065414324 @default.
- W2054203671 date "1997-06-01" @default.
- W2054203671 modified "2023-10-14" @default.
- W2054203671 title "Gas-source molecular beam epitaxy of III–V nitrides" @default.
- W2054203671 cites W1973883535 @default.
- W2054203671 cites W1976550367 @default.
- W2054203671 cites W1977920155 @default.
- W2054203671 cites W1978098797 @default.
- W2054203671 cites W1978776927 @default.
- W2054203671 cites W1979139989 @default.
- W2054203671 cites W1980179804 @default.
- W2054203671 cites W1980743069 @default.
- W2054203671 cites W1982476590 @default.
- W2054203671 cites W1983678298 @default.
- W2054203671 cites W1990212990 @default.
- W2054203671 cites W1990715982 @default.
- W2054203671 cites W1992264776 @default.
- W2054203671 cites W1994376250 @default.
- W2054203671 cites W1997273743 @default.
- W2054203671 cites W1997757835 @default.
- W2054203671 cites W1998070237 @default.
- W2054203671 cites W1999230918 @default.
- W2054203671 cites W2001769843 @default.
- W2054203671 cites W2002748801 @default.
- W2054203671 cites W2003081477 @default.
- W2054203671 cites W2004148744 @default.
- W2054203671 cites W2004381717 @default.
- W2054203671 cites W2004869996 @default.
- W2054203671 cites W2007614773 @default.
- W2054203671 cites W2011316938 @default.
- W2054203671 cites W2014319549 @default.
- W2054203671 cites W2016526319 @default.
- W2054203671 cites W2017426582 @default.
- W2054203671 cites W2020964689 @default.
- W2054203671 cites W2024321087 @default.
- W2054203671 cites W2025613147 @default.
- W2054203671 cites W2026160409 @default.
- W2054203671 cites W2027235356 @default.
- W2054203671 cites W2032847792 @default.
- W2054203671 cites W2033164510 @default.
- W2054203671 cites W2039979912 @default.
- W2054203671 cites W2041557145 @default.
- W2054203671 cites W2044943940 @default.
- W2054203671 cites W2047702415 @default.
- W2054203671 cites W2049825041 @default.
- W2054203671 cites W2050974483 @default.
- W2054203671 cites W2051628367 @default.
- W2054203671 cites W2052812342 @default.
- W2054203671 cites W2055064756 @default.
- W2054203671 cites W2056514591 @default.
- W2054203671 cites W2056589190 @default.
- W2054203671 cites W2058636107 @default.
- W2054203671 cites W2059310165 @default.
- W2054203671 cites W2059551891 @default.
- W2054203671 cites W2060125404 @default.
- W2054203671 cites W2063346539 @default.
- W2054203671 cites W2063829975 @default.
- W2054203671 cites W2064508370 @default.
- W2054203671 cites W2071816070 @default.
- W2054203671 cites W2074393011 @default.
- W2054203671 cites W2076007703 @default.
- W2054203671 cites W2079943447 @default.
- W2054203671 cites W2081133672 @default.
- W2054203671 cites W2081390902 @default.
- W2054203671 cites W2082751909 @default.
- W2054203671 cites W2082793572 @default.
- W2054203671 cites W2084226294 @default.
- W2054203671 cites W2085548533 @default.
- W2054203671 cites W2088508178 @default.
- W2054203671 cites W2092159747 @default.
- W2054203671 cites W2093326263 @default.
- W2054203671 cites W2117226743 @default.
- W2054203671 cites W2125190467 @default.
- W2054203671 cites W2152699411 @default.
- W2054203671 cites W2155492185 @default.
- W2054203671 cites W2170123178 @default.
- W2054203671 cites W2172126760 @default.
- W2054203671 cites W4236886023 @default.
- W2054203671 cites W4372124967 @default.
- W2054203671 doi "https://doi.org/10.1016/s0022-0248(97)00077-8" @default.
- W2054203671 hasPublicationYear "1997" @default.
- W2054203671 type Work @default.
- W2054203671 sameAs 2054203671 @default.
- W2054203671 citedByCount "21" @default.
- W2054203671 countsByYear W20542036712012 @default.
- W2054203671 countsByYear W20542036712015 @default.
- W2054203671 countsByYear W20542036712019 @default.
- W2054203671 countsByYear W20542036712020 @default.