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- W2054248838 abstract "X-ray diffraction methods were developed for the investigation of strain fields in mechanical components of monocrystalline silicon. This local strain fields arise from external forces and from surface defects. Two simple examples of strained silicon are shown in this paper. The average value of the surface region destroyed by slicing with a diamond wheel was 50 μm and by mechanical grinding about 80 μm thick. This destroyed surface region must be removed by an etching procedure, for getting strain free mechanical components." @default.
- W2054248838 created "2016-06-24" @default.
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- W2054248838 date "1989-04-11" @default.
- W2054248838 modified "2023-10-05" @default.
- W2054248838 title "Lattice Strain Measurements In Silicon Micropositioning Elements By X-Ray Topography" @default.
- W2054248838 doi "https://doi.org/10.1117/12.949451" @default.
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