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- W2054283967 startingPage "10308" @default.
- W2054283967 abstract "The detailed calculations of electronic structures of the ${(mathrm{BeTe})}_{n}/({mathrm{Si}}_{2}{)}_{m},$ ${(mathrm{BeTe})}_{n}/({mathrm{Ge}}_{2}{)}_{m},$ and ${(mathrm{BeTe})}_{n}/({mathrm{Si}}_{1ensuremath{-}x}{mathrm{Ge}}_{1+x}{)}_{m}$ [$xensuremath{in}(ensuremath{-}1,+1)$] (110) superlattices are performed by a semiempirical ${mathrm{sp}}^{3}s*$ tight-binding method with a wide range of $n,m<~20$. A strong quantum confinement effect is found that causes the states at the conduction- and the valence-band edges confined in two dimensions in the IV semiconductor wells. Results of how the band gap between the confined band-edge states and the lowest transition type change by varying the superlattice period are reported. Interfacial band structure and planar average of charge densities of states are presented for the BeTe-Si and BeTe-Ge boundaries. Two interface bands are identified in the upper region of the thermal gap in all the superlattices studied, which extend over a quite different region of $mathbf{k}$ space. Furthermore, the calculated electronic structures of BeTe/SiGe (110) superlattice with a wide range of composition variations are found to be quite different from that of II-VI compound grown on pure IV semiconductors, but fairly close to their average." @default.
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- W2054283967 date "1997-10-15" @default.
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- W2054283967 title "Electronic structure, interfacial chemistry, and optical properties of(II−VI)n/(IV2)m(110) superlattices" @default.
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- W2054283967 doi "https://doi.org/10.1103/physrevb.56.10308" @default.
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