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• W2054295628 endingPage "1394" @default.
• W2054295628 startingPage "1394" @default.
• W2054295628 abstract "The results of optical absorption, infrared absorption, electron spin resonance and photoluminescence measurements are presented for hydrogenated amorphous Si-N films prepared by three different methods; magnetron sputtering of an Si target in an Ar+N 2 +H 2 gas mixture, glow-discharge decomposition of SiH 4 +N 2 , and glow-discharge decomposition of SiH 4 +NH 3 . The improvement in the properties of films prepared by the third method, e.g. , the sharp band tail and low dangling-bond density, is explained mainly in terms of the structual softening due to the existence of N-H bonds. The fatigue of the photoluminescence due to illumination is found to be more prominent and the recovery due to annealing less prominent in N-incorporated film than in a-Si:H." @default.
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• W2054295628 date "1985-11-01" @default.
• W2054295628 modified "2023-10-05" @default.
• W2054295628 title "Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods" @default.
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• W2054295628 doi "https://doi.org/10.1143/jjap.24.1394" @default.
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