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• W2054335405 abstract "During vapor phase epitaxy, PH3 is generally used to preserve InP substrates. While PH3 is effective in reducing thermal decomposition, we find that excessive PH3 can produce morphological imperfections on the substrate surface. It is shown that in the temperature range of 675 to 700°C there is an optimum PH3 pressure under which the InP substrate surface morphology remains unchanged." @default.
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• W2054335405 date "1985-11-01" @default.
• W2054335405 modified "2023-09-26" @default.
• W2054335405 title "Preservation of InP substrates in vapor phase epitaxy: The effect of excess PH3" @default.
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• W2054335405 doi "https://doi.org/10.1016/0022-0248(85)90307-0" @default.
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