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• W2054365795 abstract "By combining electron microscopy and size-dependent electrical measurements, we demonstrate surface-induced heterogeneous nucleation-dominant mechanism for recrystallization of amorphous phase-change Ge2Sb2Te5 nanowires. Heterogeneous nucleation theory quantitatively predicts the nucleation rates that vary by 5 orders of magnitude from 190 to 20 nm lengthscales. Our work demonstrates that increasing the surface-to-volume ratio of nanowires has two effects: lowering of the activation energy barrier due to phonon instability and providing nucleation sites for recrystallization. The systematic study of the effect of surface in phase-change behavior is critical for understanding nanoscale phase-transitions and design of nonvolatile memory devices." @default.
• W2054365795 created "2016-06-24" @default.
• W2054365795 creator A5000341704 @default.
• W2054365795 creator A5047887142 @default.
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• W2054365795 date "2008-09-09" @default.
• W2054365795 modified "2023-09-23" @default.
• W2054365795 title "Size-Dependent Surface-Induced Heterogeneous Nucleation Driven Phase-Change in Ge₂Sb₂Te₅ Nanowires" @default.
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• W2054365795 doi "https://doi.org/10.1021/nl801698h" @default.
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• W2054365795 hasPublicationYear "2008" @default.
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