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- W2054433355 abstract "The behaviors of light-induced degradation (LID) using quasi-single-crystalline (QSC) silicon have been demonstrated. It is found that the dislocations, the main defect in QSC silicon, can significantly influence the generation kinetics of B–O complexes that are responsible for the LID effect. Compared to dislocation-poor samples, higher activation energy of 0.57±0.02 eV for the B–O complex generation in dislocation-rich silicon has been obtained, and meanwhile, the pre-exponential factor is two orders of magnitude higher. It is believed that the dislocation-related electronic states charged with holes can cause an energy potential barrier for the capture of single-positive holes that is required for the transformation of B–O complexes from latent centers to immediate transient centers." @default.
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- W2054433355 date "2012-11-01" @default.
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- W2054433355 title "Dislocation-induced variation of generation kinetics of boron–oxygen complexes in silicon" @default.
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- W2054433355 doi "https://doi.org/10.1016/j.jcrysgro.2012.08.030" @default.
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