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• W2054534689 abstract "Identical ESR signals were observed on ultrahigh vacuum crushed Si single crystals having B or P covering the entire doping range. The g-value, linewidth and line shape of the ESR signal were unaffected by the bulk doping. Maximum surface spin density of ∼2 × 1014 cm−2 was observed for samples with bulk doping corresponding to neutral surface condition. The surface spin density decreased slightly as the bulk Fermi level moved towards the band edges. Oxygen exposure had no effect on the g-value, but the linewidth was reduced by ∼15 per cent. The resonance line shape was converted by oxygen from a very broad one to an almost perfect Lorentzian line. The surface spin density of oxygen-covered surfaces was almost independent of the bulk doping and equal roughly to the maximum spin density for clean surfaces. The results therefore show that (1) the resonance centers are localized on the surface (2) there is one-to-one correspondence between the resonance centers and surface states (3) the resonance centers and hence the surface states form two discrete levels or bands ≲ 10−4 eV in width. Analysis of the ESR, surface states and Leed Measurements indicates that the rows of s-type unpaired electrons of Haneman's model are responsible for the ESR signal as well as both the donor and acceptor surface states." @default.
• W2054534689 created "2016-06-24" @default.
• W2054534689 creator A5041233102 @default.
• W2054534689 date "1971-01-01" @default.
• W2054534689 modified "2023-10-16" @default.
• W2054534689 title "The effects of bulk doping on the ESR signal of clean Si surfaces" @default.
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• W2054534689 doi "https://doi.org/10.1016/0022-3697(71)90032-1" @default.
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