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- W2054548092 abstract "The unapt design of electron layout involved in the fabrication of light emitting diode(LED) chip, especially for conventional mesa-etch structure, will cause a series of problems including electrical, optical, and thermal issues. The effects of the figure number of p- and n- electrodes as well as their spacing and width on the performance of the mesh-etched GaN-based LED chip with interdigitated contact scheme electrode had been studied and optimized by numerical simulation. The results showed that operation voltage decreased with increasing the numbers or/and the width of electrode, meanwhile the current became more uniform. However, the wall-plug efficiency droop due to the decrease of active layer and the shading for emitted light. A uniform current distribution was attained and local overheating alleviated when the distance between p- and n- electrode was about 250um using a small LED chip with 2 and 1 of n- and p-electrode, respectively. At the same time the output power reached its maximum." @default.
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- W2054548092 date "2011-02-01" @default.
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- W2054548092 title "Optimizing interdigitated contact scheme of GaN-based light-emitting diodes" @default.
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- W2054548092 doi "https://doi.org/10.1088/1742-6596/276/1/012157" @default.
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