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• W2054565086 abstract "To determine the dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ), the ac electrical conductivity (σac) and the electric modulus of Au/SiO2/n-Si structure, the measurement admittance technique was used. Experimental results show that the values of ε′, ε″, tan δ, σac and the electric modulus show fairly large frequency and gate bias dispersion especially at low frequencies due to the interface charges and polarization. An increase in the values of the ε′ and ε″ were observed with both a decrease in frequency and an increase in frequency. The σac is found to increase with both increasing frequency and voltage. In addition, the experimental dielectrical data have been analyzed considering electric modulus formalism. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal–insulator–semiconductor (MIS) structures especially at low frequencies and both in depletion and accumulation regions." @default.
• W2054565086 created "2016-06-24" @default.
• W2054565086 creator A5027110905 @default.
• W2054565086 creator A5056991611 @default.
• W2054565086 creator A5091131669 @default.
• W2054565086 date "2008-09-01" @default.
• W2054565086 modified "2023-10-18" @default.
• W2054565086 title "Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures" @default.
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• W2054565086 doi "https://doi.org/10.1016/j.mee.2008.06.009" @default.
• W2054565086 hasPublicationYear "2008" @default.
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