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- W2054610438 abstract "Nonintentionally doped metalorganic vapor-phase epitaxy Ga1−x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep- level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 1015 cm−3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 1013 cm−3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014–1015 cm−3." @default.
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- W2054610438 date "1991-08-19" @default.
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- W2054610438 title "Defects in organometallic vapor-phase epitaxy-grown GaInP layers" @default.
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- W2054610438 doi "https://doi.org/10.1063/1.106308" @default.
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