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- W2054614499 abstract "Amorphous silicon-nitrogen (a-Si1−xNx:H) alloys with x in the range 0.01–0.57 have been deposited in a dedicated chamber by ultra high vacuum plasma enhanced chemical vapour deposition (PECVD) in SiH4 + NH3 gas mixtures with different molecule dwell time and by hydrogen diluting the plasma. By optical spectroscopy, Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA) and infrared spectroscopy (IR) a complete picture of bonding distribution and structural properties of device-quality a-Si1−xNx:H films as a function of deposition conditions has been drawn. Annealing experiments under vacuum up to 500°C have shown that in all the compositional range the films are thermally stable up to 400°C, for higher temperature bonded hydrogen effuses from both silicon and nitrogen atoms with behaviours dependent on nitrogen content in the film." @default.
- W2054614499 created "2016-06-24" @default.
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- W2054614499 date "1997-10-01" @default.
- W2054614499 modified "2023-10-18" @default.
- W2054614499 title "Structural properties of a-Si1−xNx:H films grown by plasma enhanced chemical vapour deposition by SiH4 + NH3 + H2 gas mixtures" @default.
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- W2054614499 doi "https://doi.org/10.1016/s0040-6090(97)00272-1" @default.
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