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• W2054650503 abstract "We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than $1phantom{rule{0.3em}{0ex}}ensuremath{mu}mathrm{m}$ at a width of $ensuremath{approx}4phantom{rule{0.3em}{0ex}}mathrm{nm}$. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way." @default.
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• W2054650503 date "2007-06-29" @default.
• W2054650503 modified "2023-09-27" @default.
• W2054650503 title "Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy" @default.
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• W2054650503 doi "https://doi.org/10.1103/physrevb.75.241309" @default.
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