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- W2054668827 abstract "Deposition of gate insulator in the arsenic-based compound semiconductors (such as GaAs, AlGaAs), always causes stoichiometric changes in these materials. The deposition of any materials above 350 °C results in the segregation of As at the surface of the semiconductor, which deteriorates the metal-insulator field effect transistor properties. a-C:H can be deposited at room temperature and hence the effect of temperature on arsenic segregation can be eliminated. This work investigates the use of a-C:H as a gate insulator in arsenic-based compound semiconductors." @default.
- W2054668827 created "2016-06-24" @default.
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- W2054668827 date "2003-10-01" @default.
- W2054668827 modified "2023-09-27" @default.
- W2054668827 title "Use of amorphous carbon as a gate insulator for GaAs and related compounds" @default.
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- W2054668827 doi "https://doi.org/10.1016/s0167-9317(03)00393-9" @default.
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