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• W2054696546 endingPage "115101" @default.
• W2054696546 startingPage "115101" @default.
• W2054696546 abstract "Tip-induced deformation of graphene on a SiO 2 substrate was probed through a combination of scanning capacitance microscopy (SCM) and dynamic force microscopy (DFM). Spectroscopic analysis revealed that the resonant frequency shift (Δ f ) of the probe tip oscillation and the modulated capacitance (Δ C ) simultaneously measured on graphene depend on the externally applied bias voltage while keeping the tip–sample distance constant. This finding is interpreted as a result of a local displacement of the graphene surface caused by the electrostatic force between the probe tip and graphene. The approach curve of the SCM tip toward graphene can be used to calibrate the observed Δ C spectra, quantitatively yielding an average deformation of approximately 0.31 nm in trilayer graphene and 0.21 nm in single-layer graphene." @default.
• W2054696546 created "2016-06-24" @default.
• W2054696546 creator A5081835669 @default.
• W2054696546 date "2012-11-01" @default.
• W2054696546 modified "2023-09-24" @default.
• W2054696546 title "Tip-Induced Deformation of Graphene on SiO₂ Assessed by Capacitance Measurement" @default.
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• W2054696546 doi "https://doi.org/10.1143/jjap.51.115101" @default.
• W2054696546 hasPublicationYear "2012" @default.
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