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- W2054698900 abstract "Electro-optical properties of n-GaAs crystal were studied by using a transparent, electrolyte Schottky contact and the following results were obtained: highly sensitive detection of some critical-point energies in the band structure of GaAs and the Franz-Keldysh shift of the fundamental absorption edge at high electric fields; the observation of a new capacitance-voltage hysteresis effect of the electrolyte-GaAs contact, with a characteristic threshold-field. Details of this hysteresis are presented with related photocapacitance spectra of the contact. In addition, its mechanism is explained by assuming field-enhanced trapping of hot electrons at complex deep-levels and their succeeding charge-state controlled structural transformation." @default.
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- W2054698900 date "1996-09-01" @default.
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- W2054698900 title "Capacitance-voltage hysteresis of an electrolyte-GaAs Schottky contact associated with field-enhanced trapping of hot electrons" @default.
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- W2054698900 doi "https://doi.org/10.1016/0038-1101(96)00048-2" @default.
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