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• W2054724871 abstract "In this article, we report the fabrication of SnO2 thin film transistors (TFTs) fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p-type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p-channel SnO2 TFTs. The on/off ratio and the field-effect mobility were ∼103 and 0.011cm2∕Vs, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p-channel oxide TFTs would open up new challenges in the area of transparent electronics." @default.
• W2054724871 created "2016-06-24" @default.
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• W2054724871 date "2008-03-24" @default.
• W2054724871 modified "2023-10-18" @default.
• W2054724871 title "Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits" @default.
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• W2054724871 doi "https://doi.org/10.1063/1.2898217" @default.
• W2054724871 hasPublicationYear "2008" @default.
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