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• W2054795233 abstract "The surface morphology of silicon (100) wafers has been measured by scanning tunneling microscopy. Samples which were bombarded with low-energy argon ions are found to have an average root-mean-square roughness of 4.0 Å, and the surfaces are covered with characteristic 50-Å-diam hillocks. The roughness of nonbombarded (control) samples is observed to be 1.8 Å, and this roughness arises in part from disorder at the interface between a native oxide and the silicon substrate." @default.
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• W2054795233 date "1985-07-15" @default.
• W2054795233 modified "2023-10-16" @default.
• W2054795233 title "Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy" @default.
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• W2054795233 doi "https://doi.org/10.1063/1.96431" @default.
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