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- W2054806678 abstract "Porous silicon was prepared in a square ring formed in an N-type Si epitaxial layer grown on a p-type Si substrate. A sharp notch was generated at the PN junction of the surface during anodization in HF solution. The notch formed at the boundary between the porous silicon region and the N-type silicon region. The notch began to appear at the outside ring. It also appeared at the inside ring during anodization. This notch had a V shape with a steep slope at the N-type silicon side which grows with anodization time. Using the film mask method, the generation of the notch could be prevented. The notch at the PN junction was considered to be formed due to Si etching caused by localized electropolishing near the PN junction. © 2004 The Electrochemical Society. All rights reserved." @default.
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- W2054806678 date "2004-01-01" @default.
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- W2054806678 title "Observation of a Sharp Notch at a Si-PN Junction Formed by Anodization in HF Solution" @default.
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- W2054806678 doi "https://doi.org/10.1149/1.1644608" @default.
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