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• W2054870246 startingPage "7" @default.
• W2054870246 abstract "A new preparation is reported which, for the first time, results in a thin, crystalline SiO2 film on a Mo(112) single crystal. The procedure consists of repeated cycles of silicon deposition and subsequent oxidation, followed by a final annealing procedure. AES and XPS have been used to control film stoichiometry. LEED pictures of high contrast show a hexagonal, crystalline SiO2 overlayer with a commensurate relationship to the Mo(112) substrate. The wetting of the substrate by the film has been investigated by LEED, XPS and TDS, revealing that the film covers the substrate completely." @default.
• W2054870246 created "2016-06-24" @default.
• W2054870246 creator A5075626502 @default.
• W2054870246 date "2000-04-01" @default.
• W2054870246 modified "2023-09-27" @default.
• W2054870246 title "Epitaxial Growth of SiO2 on Mo(112)" @default.
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• W2054870246 doi "https://doi.org/10.1016/s0218-625x(00)00003-8" @default.
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