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- W2054982009 abstract "Metal-oxide-semiconductor memory capacitors composed of dual-layer nanocrystalline ZnO embedded zirconium-doped hafnium oxide high- film were fabricated, characterized, and compared with those with the single-layer nanocrystalline ZnO embedded sample. Distinct layers of discretely dispersed nanocrystalline dots embedded in the amorphous high- matrix were observed. The nanocrystalline ZnO dots trap many electrons. The dual-layer sample not only drastically increases the charge storage density but also improves the charge trapping speed due to the coulomb blockade effect. This is a potentially important gate dielectric structure for high density, high speed nonvolatile memories." @default.
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- W2054982009 date "2010-01-01" @default.
- W2054982009 modified "2023-09-24" @default.
- W2054982009 title "Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO[sub 2] High-k Dielectric" @default.
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- W2054982009 doi "https://doi.org/10.1149/1.3276055" @default.
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