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- W2055000256 abstract "Up-converted photoluminescence (UPL) was observed at the long-range ordered (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P/GaAs(001) heterointerface, during the excitation of GaAs. Excitation-power dependence of the UPL intensity reflects carrier-localization properties caused by potential fluctuations due to a multidomain structure in the ordered (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P. When we excited the GaAs layer, photoexcited carriers spatially transferred to the (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P layer and relaxed from higher lying states to lower lying states in the fluctuated potential. Time-resolved measurements were performed for the UPL and normal photoluminescence (NPL) excited by an above-gap light. We observed a slowly rising component in the time-resolved UPL, whereas the NPL showed an exponential decay profile. These results reveal that the carrier-relaxation processes are different near the surface and near the interface of the epitaxial layer." @default.
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- W2055000256 date "1999-02-01" @default.
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- W2055000256 title "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al<sub>0.5</sub>Ga<sub>0.5</sub>)<sub>0.5</sub>In<sub>0.5</sub>P and GaAs Heterointerface" @default.
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- W2055000256 doi "https://doi.org/10.1143/jjap.38.1001" @default.
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