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- W2055086136 abstract "We investigated electrical properties of laterally aligned npn junctions formed with one-step molecular beam epitaxial growth of Si-doped GaAs on patterned substrates. Detailed current-voltage (I-V) measurements of the lateral npn junctions showed asymmetric characteristics which suggest that the junction configuration is rather nn−pn with a highly compensated n− region than a simple npn configuration. Temperature dependence of the I-V curves was also examined. Cross-sectional electron beam induced current and transmitted electron microscope measurements revealed the critical angle of the crystal plane at which conduction type of Si-doping converts to be exactly 25°, i.e. (311)A plane." @default.
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- W2055086136 date "1995-05-01" @default.
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- W2055086136 title "Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substrates" @default.
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- W2055086136 doi "https://doi.org/10.1016/0022-0248(95)80239-9" @default.
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