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- W2055124626 abstract "This work introduced a novel spacer scheme for polymer/metal nanowire preparation by combining Parylene C and photoresist (Parylene C on photoresist, POP, process), both of which possess a low temperature fabrication essence. Adhesion between the Parylene C and the substrate with photoresist onside was improved by introducing a modified silanization pretreatment. Parylene C filled in an undercut generated by regular lithography on a dual-layered photoresist was left as nanometer-sized residues after an isotropic oxygen plasma etching. Parylene C nanowires with the minimal width down to 200 nm were successfully obtained by this POP-based spacer technique, and were then utilized as the etching mask for ion milling of the metal films beneath to realize corresponding chromium/gold nanowires. The present POP scheme will expand the application of the spacer technique in polymer/metal nanowire fabrication for integrated micro/nanoelectromechanical systems." @default.
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- W2055124626 date "2011-04-21" @default.
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- W2055124626 title "Parylene C-on-photoresist (POP): a low temperature spacer scheme for polymer/metal nanowire fabrication" @default.
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- W2055124626 doi "https://doi.org/10.1088/0960-1317/21/6/067001" @default.
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