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• W2055144947 abstract "Theoretical investigations of the influence of grain size (D) and doping density (NA), on the carrier concentration (p*) and effective resistivity (ϱ*) of polycrystalline silicon are made, considering the finite thickness (2t) of the grain boundary region and the dynamics of capture and release of carriers at the grain boundary trap-states. It is found that for low values of impurity concentration the average carrier concentration (p*) and the effective resistivity (ϱ*) are controlled by trapping of free carriers at the grain boundary trap-states where, as for higher doping densities, the values of p* and ϱ* tend to those of a single crystal as a result of saturation of the trapping states. Theoretische Untersuchungen des Einflusses von Korngröße (D) und Dotierungsdichte (NA) auf die Ladungsträgerkonzentration (p*) und den effektiven Widerstand (ϱ*) von polykristallinem Silizium wird unter Berücksichtigung der endlichen Dicke (2t) des Korngrenzenbereichs und der Einfang- und Reesmissionsdynamik der Ladungsträger an den Korngrenzenhaftstellenniveaus durchgeführt. Es wird gefunden, daß für niedrige Werte der Störstellenkonzentration die mittlere Trägerkonzentration (p*) und der effektive Widerstand (ϱ*) durch Einfang von freien Trägern an den Korngrenzenniveaus gesteuert werden, während für höhere Dotierungsdichten, die Werte von p* und ϱ* sich denen für einen Einkristall als Ergebnis der Sättigung der Haftstellenzustände annähern." @default.
• W2055144947 created "2016-06-24" @default.
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• W2055144947 date "1983-12-16" @default.
• W2055144947 modified "2023-09-25" @default.
• W2055144947 title "On the resistivity of polycrystalline silicon" @default.
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• W2055144947 doi "https://doi.org/10.1002/pssa.2210800233" @default.
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