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• W2055301696 abstract "Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si 0.7 Ge 0 . 3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi 2 on Si 0.7 Ge 0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices." @default.
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• W2055301696 date "2010-10-01" @default.
• W2055301696 modified "2023-09-26" @default.
• W2055301696 title "Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer" @default.
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• W2055301696 doi "https://doi.org/10.1016/j.tsf.2010.04.090" @default.
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