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- W2055365855 abstract "High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects [1]. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene — the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to “pinch off” electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics." @default.
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- W2055365855 date "2009-06-01" @default.
- W2055365855 modified "2023-09-27" @default.
- W2055365855 title "Planar tunnel junction fabrication and bandgap engineering on bilayer graphene" @default.
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