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- W2055449733 abstract "Interelectrode ramp breakdowns have been studied on double‐ polysilicon RAM's as a function of five fabrication parameters: (i) the polysilicon thickness, (ii) the polysilicon doping, (iii) the removal of the first‐gate oxide, (iv) the oxidation of the second gate, and (v) the post second‐gate thermal annealing. For the particular case using an second‐gate oxidation, a 1000°C 15 min post gate 2 anneal significantly improved the breakdown yield. Without the anneal, the breakdown yield was found to be extremely dependent on the poly 1 phosphorus concentration between . The breakdown dependence on all five parameters has been explained in terms of a previously reported stress model." @default.
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- W2055449733 date "1983-07-01" @default.
- W2055449733 modified "2023-09-27" @default.
- W2055449733 title "Ramp Breakdown Study of Double Polysilicon RAM's as a Function of Fabrication Parameters" @default.
- W2055449733 doi "https://doi.org/10.1149/1.2120041" @default.
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