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• W2055500695 abstract "We have investigated photoluminescence and electrical properties of P−doped ZnTe layers grown by metalorganic vapor phase epitaxy as a function of VI/II ratio. Near band-edge emissions are strongly influenced by VI/II ratio. The low VI/II ratio corresponding to Zn-rich condition brings about heavy p-type doping with P as compared to Te-rich condition. The best VI/II ratio for obtaining high quality layer is one. A maximum carrier concentration of 5.4 × 1018 cm−3 is attained even for as-grown ZnTe layer. In this sample, the carrier concentration is almost independent of the measurement temperature, indicating conduction in an impurity band formed by shallow acceptor." @default.
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• W2055500695 date "2011-11-01" @default.
• W2055500695 modified "2023-09-23" @default.
• W2055500695 title "Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy" @default.
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• W2055500695 doi "https://doi.org/10.1016/j.tsf.2011.01.231" @default.
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