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• W2055644295 abstract "• We studied the donor Sn-doped Cu(In,Ga)Se 2 or CIGSe bulks at different Cu contents. • Cu-less CIGSe is used to control carrier concentration but easily loss mobility. • Sn doping here is to control the carrier concentration but keep high Cu content. • By changing the Cu content, n - and p -type CIGSe with good properties were achieved. • The CIGSe absorber shows the property diversity with the donor doping. The elaborated Sn-doped Cu(In,Ga)Se 2 (Sn-CIGSe) bulk materials with different Cu ratios had been sintered at 650 °C. Sn-CIGSe was reactively sintered with Sb 2 S 3 and Te sintering aids. Electrical properties of Sn-CIGSe were measured and the variations in mobility, charge carrier density, and conductivity were rationalized. The Sn 4+ donor in Cu-poor CIGSe favored the n -type behavior and the Cu deficiency increased electron concentration due to the formation of the indium-to-copper donor. The n → p transition for the Cu-rich Sn-CIGSe is related to the partial formation of the copper-to-indium and Sn 2+ acceptor. Carrier mobility above 12 cm 2 /V s can be achieved for Sn-CIGSe with a higher Cu content. The advantages of Sn doping in CIGSe were claimed." @default.
• W2055644295 created "2016-06-24" @default.
• W2055644295 creator A5023760437 @default.
• W2055644295 creator A5085029982 @default.
• W2055644295 date "2013-12-01" @default.
• W2055644295 modified "2023-09-25" @default.
• W2055644295 title "Influence of Cu content on the n→p transition of 15% Sn-doped Cux(In,Ga)Se2 bulk materials" @default.
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• W2055644295 doi "https://doi.org/10.1016/j.jallcom.2013.06.105" @default.
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