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- W2055648502 abstract "A model has been developed successfully to study the nucleation and growth mechanisms of the GaxIn1 − xP vapour phase epitaxial (VPE) growth in the Ga-In-HCl-PH3-H2 system. Using classical heterogeneous nucleation theory the critical nucleation parameters have been derived and the effect of substrate orientations has been studied. By applying physico-chemical concepts, an expression for the composition has been derived as a function of experimental input parameters by considering the number of intermediate reactions. The effect of experimental input parameters on the nucleation and growth mechanism has been analysed in detail and it was found that the (100) orientation has the highest nucleation barrier, and the composition was strongly affected by deposition temperature and input gas mole ratio. It was also found that Ga is preferentially deposited rather than In. The predicted results are compared with the experimental data and found to be in good agreement." @default.
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- W2055648502 date "1996-07-01" @default.
- W2055648502 modified "2023-10-05" @default.
- W2055648502 title "Evaluation of composition and growth rate of GaxIn1 − xP vapour phase epitaxy" @default.
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- W2055648502 doi "https://doi.org/10.1016/0254-0584(96)80041-1" @default.
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