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- W2055668230 abstract "Optical measurements were performed near the fundamental absorption edge for thin polycrystalline films with the entire region of composition in the GaNInN quasi-binary system. The direct energy gap Eg for GaN and InN was found to be 3.40 and 1.95 eV, respectively. The dependence of Eg on composition was found to deviate downward from linearity. The degree of bowing was expressed well by the theoretical bowing parameter (1.05 eV) calculated by the dielectric method. Optische Messungen wurden in der Nähe der fundamental Apsorptionskanten für dünne polykristalline Schichten mit dem ganzem Zusammensetzungsbereich in GaNInN quasibinären System ausgeführt. Die direkten Bandabstände Eg ergab für GaN und InN zu 3.40 und 1.95 eV. Die Zusammensetzungsabhangigkeit der Eg wurde gefunden, der ergibt sich die negativen Abweichungen von der gerade Linien. Der Abweichungsgrad wurde gute durch das theoretische Verbeugungsparameter (1.05 eV), berechnet durch der dielektrischen Methode, ausgedrückt." @default.
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- W2055668230 date "1972-09-01" @default.
- W2055668230 modified "2023-10-17" @default.
- W2055668230 title "Fundamental absorption edge in GaN, InN and their alloys" @default.
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- W2055668230 doi "https://doi.org/10.1016/0038-1098(72)90474-7" @default.
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