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• W2055743649 abstract "Electron capture induced by carrier heating in InAs∕GaAs quantum dots is studied theoretically. Room temperature capture rates due to single longitudinal-optical (LO) phonons, LO phonons plus acoustic phonons, and two LO phonons are compared. Due to energy broadening from carrier-carrier scattering, single LO-phonon processes are the fastest capture channel. Screening from wetting-layer (WL) carriers is studied comprehensively using a number of screening models. Due to the dispersion of the WL electron-hole plasma and dynamic effects of screening, antiscreening occurs expediting rather than slowing down electron capture, with capture times of several picoseconds when the carrier temperature is 100–200K above room temperature." @default.
• W2055743649 created "2016-06-24" @default.
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• W2055743649 date "2006-10-09" @default.
• W2055743649 modified "2023-10-16" @default.
• W2055743649 title "Rapid hot-electron capture in self-assembled quantum dots via phonon processes" @default.
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• W2055743649 doi "https://doi.org/10.1063/1.2360913" @default.
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