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- W2055778749 abstract "We present an apparatus for measuring noise in MOSFETs on silicon wafers. The system can measure noise accurately down to 10 nV/Hz1/2 and has a useful bandwidth of 0.01 Hz to 30 kHz. The drain current, source voltage, gate voltage, and the temperature (77 to 400 K) are computer controlled. We have designed a chip with both N and P channel test transistors in a range of sizes and geometries. The chip also includes a diode for temperature measurement. The wafers are processed in a controlled industrial environment giving reproducible device characteristics. Schematics for an ADC-DAC high-performance card offering many programmable features are also presented. A very-low-noise preamplifier working at liquid-nitrogen temperature is also described. The system is not restricted to measuring MOS transistors; any passive or active device can be measured making only simple changes to the bias circuitry. We also present results obtained with a typical MOSFET." @default.
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- W2055778749 date "1988-06-01" @default.
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- W2055778749 title "Experimental apparatus for measuring noise in MOSFETs on silicon wafers" @default.
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- W2055778749 doi "https://doi.org/10.1063/1.1139757" @default.
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