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• W2055882498 abstract "As a potential candidate for future nonvolatile memory (NVM) application, the discrete charge storage nodes formed as the nanocrystal (NC) structure has been caught much attention. Among the NC materials, high-k metal oxide is the unique one due to the mixed chemical reactions during high temperature forming process. The over-view of gadolinium oxide nanocrystal (Gd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -NC) memory is revealed in this paper. Gd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -NC was formed by one step rapid thermal annealing treated on the amorphous Gd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> film prepared by sputter system. The optical tests were conducted to exam the bandgap value of the Gd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -NC and the x-ray tests were conducted to exam the valence band offset. The charge trapping phenomenon can be characterized by the retention tests for various temperatures. Forming gas annealing was treated on the Gd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -NC to passivate the deep traps. A band engineered method by CF <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> plasma treatment was also conducted to improve the memory characteristics." @default.
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• W2055882498 date "2012-10-01" @default.
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• W2055882498 title "Energy-band engineering and characterization improvements by fluorine incorporation on Gd<inf>2</inf>O<inf>3</inf> nanocrystal memory" @default.
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• W2055882498 doi "https://doi.org/10.1109/icsict.2012.6467581" @default.
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