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- W2055888683 abstract "Abstract Semiconducting As 2 Se 3 thin films have been prepared from an aqueous bath at room temperature onto stainless steel and fluorine-doped tin oxide (F.T.O.)-coated glass substrates using an electrodeposition technique. It has been found that As 2 O 3 and SeO 2 in the volumetric proportion as 4:6 and their equimolar solutions of 0.075 M concentration forms good quality films of As 2 Se 3 . The films are annealed in a nitrogen atmosphere at temperature of 200 °C for 2 h. The films are characterised by scanning electron microscopy, X-ray diffraction and optical absorption techniques. Studies reveal that asdeposited and annealed thin films are polycrystalline in nature. The optical band gap has been found to be 2.15 eV for the above-mentioned composition and concentration of the film." @default.
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- W2055888683 date "2003-04-01" @default.
- W2055888683 modified "2023-10-18" @default.
- W2055888683 title "Electrodeposition of As2Se3 thin films" @default.
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- W2055888683 doi "https://doi.org/10.1016/s0025-5408(03)00030-8" @default.
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