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• W2055896598 abstract "In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10−3 Ω cm." @default.
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• W2055896598 date "2009-10-01" @default.
• W2055896598 modified "2023-09-29" @default.
• W2055896598 title "Characteristics of ZnO:In thin films prepared by RF magnetron sputtering" @default.
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• W2055896598 doi "https://doi.org/10.1016/j.physe.2009.07.006" @default.
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