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• W2055935377 abstract "Insulating SiOx film was deposited with newly developed plasma source at low temperature for fabrication of flexible devices on plastic substrate. The plasma was generated with electromagnetic field by two facing electrodes including magnets inside and covered with SiO2 targets. The higher deposition rate was achieved from 2.0 to 33 nm/min, with the mixture of tetramethylsilane and oxygen as source gases. The insulating properties were obtained as 3 × 10−8 A/cm2 at the electric field of 1 MV/cm, and the breakdown voltage of 5 MV/cm at 1 × 10−6 A/cm2 for the film deposition rate at 11.6 nm/min. High density plasma enhanced by magnetic field would be the hopeful solution for gate insulator deposited at high deposition rate with low temperature." @default.
• W2055935377 created "2016-06-24" @default.
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• W2055935377 date "2014-03-01" @default.
• W2055935377 modified "2023-09-26" @default.
• W2055935377 title "Low temperature deposition of SiO insulator film with newly developed facing electrodes chemical vapor deposition" @default.
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• W2055935377 doi "https://doi.org/10.1016/j.vacuum.2013.08.003" @default.
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